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IPB160N04S3-H2

Infineon Technologies AG
RoHS
/
Package /
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
PDF
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Buying Options
Total Price: USD $1.61
Unit Price: USD $1.6093
≥1 USD $1.6093
≥200 USD $1.3205
≥500 USD $1.27965
≥1000 USD $1.23785
Inventory: 2899
Minimum: 1
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Technical Details

Physical

Surface Mount YES
Number of Terminals 6
Transistor Element Material SILICON

Technical

Pbfree Code icon-pbfree yes
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G6
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-263
Drain Current-Max (Abs) (ID) 160A
Drain-source On Resistance-Max 0.0021Ohm
Pulsed Drain Current-Max (IDM) 640A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 898 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 214W

Compliance

RoHS Status RoHS Compliant

Alternative Model

BC307CG

ON Semiconductor

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