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IPB200N25N3 G

Infineon Technologies AG
RoHS
/
Package /
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
PDF
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Buying Options
Total Price: USD $8.44
Unit Price: USD $8.437107
≥1 USD $8.437107
≥10 USD $7.959533
≥100 USD $7.508988
≥500 USD $7.083958
≥1000 USD $6.682979
Inventory: 4853
Minimum: 1
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Technical Details

Physical

Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON

Technical

JESD-609 Code e3
Pbfree Code icon-pbfree no
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-263AB
Drain Current-Max (Abs) (ID) 64A
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 256A
DS Breakdown Voltage-Min 250V
Avalanche Energy Rating (Eas) 320 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR

Compliance

RoHS Status RoHS Compliant

Alternative Model

APTM100H80FT1G

Microsemi Corporation

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