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BSZ086P03NS3E G

Infineon Technologies AG
RoHS
/
Package /
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
PDF
/
Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8056
≥1 USD $0.8056
≥10 USD $0.6612
≥100 USD $0.6403
≥500 USD $0.62035
≥1000 USD $0.59945
Inventory: 1591
Minimum: 1
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Technical Details

Physical

Surface Mount YES
Number of Terminals 5
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

JESD-609 Code e3
Pbfree Code icon-pbfree no
Moisture Sensitivity Level (MSL) 1
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ESD PROTECTED
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
Drain Current-Max (Abs) (ID) 13.5A
Drain-source On Resistance-Max 0.0134Ohm
Pulsed Drain Current-Max (IDM) 160A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 105 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR

Alternative Model

SCH1330-TL-W

Rochester Electronics, LLC

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