STGW60H65F
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors 60A 650V FST IGBT Very High Switching
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Buying Options
Total Price: USD $1.66
Unit Price: USD $1.65965
≥1 USD $1.65965
≥10 USD $1.36135
≥100 USD $1.31955
≥500 USD $1.2768
≥1000 USD $1.23405
Inventory: 1582
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Gate-Emitter Voltage-Max 20V
Switching Energy 750μJ (on), 1.05mJ (off)
Td (on/off) @ 25°C 65ns/180ns
Current - Collector Pulsed (Icm) 240A
Gate Charge 217nC
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 265 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 60A
Test Condition 400V, 60A, 10 Ω, 15V
Turn On Time 96 ns
Collector Emitter Saturation Voltage 1.9V
Collector Emitter Breakdown Voltage 650V
Max Collector Current 120A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 210 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 360W
Turn On Delay Time 65 ns
Input Type Standard
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STGW60
Max Power Dissipation 360W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.500007g
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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