Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.3mJ (off)
Td (on/off) @ 25°C -/250ns
Current - Collector Pulsed (Icm) 120A
IGBT Type Trench Field Stop
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 40A
Test Condition 600V, 40A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.4V
Voltage - Collector Emitter Breakdown (Max) 1350V
Collector Emitter Breakdown Voltage 1.35kV
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 1.35kV
Polarity/Channel Type N-CHANNEL
Halogen Free Halogen Free
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 394W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~175°C TJ