Gate-Emitter Thr Voltage-Max 2.2V
Gate-Emitter Voltage-Max 12V
Td (on/off) @ 25°C -/3.64μs
Turn Off Time-Nom (toff) 6000 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 4V, 6A
Test Condition 300V, 1k Ω, 5V
Max Breakdown Voltage 430V
Collector Emitter Breakdown Voltage 430V
Max Collector Current 15.5A
Collector Emitter Voltage (VCEO) 1.8V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Base Part Number ISL9V2540
Max Power Dissipation 166.7W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~175°C TJ