Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.7mJ (on), 1.55mJ (off)
Td (on/off) @ 25°C 30ns/87ns
Current - Collector Pulsed (Icm) 310A
Turn Off Time-Nom (toff) 268 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 60A
Test Condition 450V, 60A, 3 Ω, 15V
Collector Emitter Saturation Voltage 2.7V
Collector Emitter Breakdown Voltage 900V
Max Collector Current 140A
Collector Emitter Voltage (VCEO) 2.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 750W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ