IXGP48N60B3
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
DISC IGBT PT-MID FREQUENCY TO-22
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Fall Time-Max (tf) 200ns
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 840μJ (on), 660μJ (off)
Td (on/off) @ 25°C 22ns/130ns
Current - Collector Pulsed (Icm) 280A
Gate Charge 115nC
IGBT Type PT
Turn Off Time-Nom (toff) 347 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 32A
Test Condition 480V, 30A, 5 Ω, 15V
Turn On Time 44 ns
Power Dissipation-Max (Abs) 300W
Current - Collector (Ic) (Max) 48A
Voltage - Collector Emitter Breakdown (Max) 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 25ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 300W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series GenX3?
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 1 Weeks
Alternative Model
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