Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 8mJ (off)
Td (on/off) @ 25°C 50ns/300ns
Current - Collector Pulsed (Icm) 200A
Turn Off Time-Nom (toff) 1200 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 60A
Test Condition 480V, 60A, 2.7 Ω, 15V
Collector Emitter Saturation Voltage 1.7V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 30 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Base Part Number IXG*60N60
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) Not Applicable
Operating Temperature -55°C~150°C TJ