IRGB4064DPBF
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 20A 101W TO220AB
PDF
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Buying Options
Total Price: USD $4.03
Unit Price: USD $4.028
≥1 USD $4.028
≥10 USD $3.30505
≥100 USD $3.2015
≥500 USD $3.09795
≥1000 USD $2.99535
Inventory: 129
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.82mm
Length 10.66mm
Height 9.02mm
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Switching Energy 29μJ (on), 200μJ (off)
Td (on/off) @ 25°C 27ns/79ns
Current - Collector Pulsed (Icm) 40A
Gate Charge 21nC
IGBT Type Trench
Turn Off Time-Nom (toff) 131 ns
Vce(on) (Max) @ Vge, Ic 1.91V @ 15V, 10A
Test Condition 400V, 10A, 22 Ω, 15V
Turn On Time 43 ns
Collector Emitter Saturation Voltage 1.6V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 62 ns
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 1.91V
Turn-Off Delay Time 79 ns
Polarity/Channel Type N-CHANNEL
Rise Time 15 ns
Transistor Application POWER CONTROL
Turn On Delay Time 27 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 101W
Element Configuration Single
Number of Elements 1
Max Power Dissipation 101W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2006
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Weight 6.000006g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 99 Weeks
Alternative Model
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