Input Capacitance (Cies) @ Vce 16.9nF @ 30V
Gate-Emitter Voltage-Max 20V
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 5mA
Max Collector Current 330A
Collector Emitter Voltage (VCEO) 3.6V
Configuration Half Bridge
Max Power Dissipation 1.316kW
Subcategory Insulated Gate BIP Transistors
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature 150°C TJ