GA400TD25S
RoHS
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Package Dual INT-A-PAK (3 + 8)
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT FAST 250V 400A INT-A-PAK
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 36nF @ 30V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
Turn Off Time-Nom (toff) 1633 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 400A
Turn On Time 1615 ns
Input Capacitance 36nF
Collector Emitter Breakdown Voltage 250V
Current - Collector Cutoff (Max) 500μA
Max Collector Current 400A
Collector Emitter Voltage (VCEO) 1.6V
Input Standard
Polarity/Channel Type N-CHANNEL
Rise Time 365ns
Transistor Application POWER CONTROL
Power - Max 1350W
Case Connection ISOLATED
Element Configuration Dual
Configuration Half Bridge
Number of Elements 2
JESD-30 Code R-XUFM-X11
Pin Count 11
Base Part Number GA*TD
Current Rating 400A
Peak Reflow Temperature (Cel) 235
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 1.35kW
Voltage - Rated DC 250V
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish TIN LEAD
ECCN Code EAR99
Number of Terminations 11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2002
Packaging Bulk
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 7
Package / Case Dual INT-A-PAK (3 + 8)
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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