Input Capacitance (Cies) @ Vce 47nF @ 10V
Gate-Emitter Voltage-Max 20V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1mA
Max Collector Current 200A
Collector Emitter Voltage (VCEO) 2.5V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Configuration Half Bridge
Terminal Form UNSPECIFIED
Max Power Dissipation 1.13kW
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ