APTGV30H60T3G
RoHS
/
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 600V 50A/50A/42A/42A 32-Pin Case SP-3
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 1.6nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type NPT, Trench Field Stop
Turn Off Time-Nom (toff) 310 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Turn On Time 170 ns
Input Capacitance 1.6nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 1.9V
Input Standard
Polarity/Channel Type N-CHANNEL
Power - Max 90W
Case Connection ISOLATED
Configuration Full Bridge Inverter
Number of Elements 4
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X25
Pin Count 25
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 90W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN SILVER COPPER
Number of Terminations 25
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 2016
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case SP3
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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