MWI50-06A7
RoHS 
RoHS compliant
RoHS compliantPackage E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 600V 72A 18-Pin E2
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
VCEsat-Max 2.4 V
Input Capacitance (Cies) @ Vce 2.8nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 330 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 50A
Turn On Time 110 ns
Input Capacitance 2.8nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 600μA
Max Collector Current 72A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 300 ns
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 225W
Turn On Delay Time 50 ns
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 6
JESD-30 Code R-XUFM-P11
Pin Count 17
Base Part Number MWI
Terminal Form PIN/PEG
Terminal Position UPPER
Max Power Dissipation 225W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST, LOW SWITCHING LOSS, LOW SATURATION VOLTAGE
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Terminations 11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2007
Packaging Bulk
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 18
Package / Case E2
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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