MIXA80R1200VA
RoHS 
RoHS compliant
RoHS compliantPackage V1A-PAK
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT Modules Boost/Brake Module XPT IGBT
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Technical Details
Supply Chain
Factory Lead Time 25 Weeks
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case V1A-PAK
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 390W
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X8
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 390W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 120A
Current - Collector Cutoff (Max) 200μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 77A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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