MIXA450PF1200TSF
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT Modules 1200V XPT Phase-legs XPT IGBT Modules
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Buying Options
Total Price: USD $150.9
Unit Price: USD $150.9024
≥1 USD $150.9024
≥10 USD $141.33504
Inventory: 23
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
VCEsat-Max 2.2 V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type PT
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 450A
Turn On Time 110 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1mA
Max Collector Current 650A
Collector Emitter Voltage (VCEO) 2.15V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 2100W
Case Connection ISOLATED
Configuration Half Bridge
Number of Elements 2
JESD-30 Code R-XUFM-X11
Pin Count 11
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 2.1kW
Subcategory Insulated Gate BIP Transistors
Number of Terminations 11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Bulk
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case Module
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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