MII150-12A4
RoHS 
RoHS compliant
RoHS compliantPackage Y3-DCB
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1.2KV 180A 7-Pin Y3-DCB
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Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case Y3-DCB
Number of Pins 7
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2000
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 760W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MII
Pin Count 7
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 760W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 180A
Current - Collector Cutoff (Max) 7.5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 6.6nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 100A
Turn Off Time-Nom (toff) 570 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.6nF @ 25V
VCEsat-Max 3 V
Dimensions
Height 30mm
Length 110mm
Width 62mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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