CSD22206W
RoHS 
RoHS compliant
RoHS compliantPackage 9-UFBGA, DSBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
8V P-CHANNEL FEMTOFET
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Buying Options
Total Price: USD $0.65
Unit Price: USD $0.6512
≥1 USD $0.6512
≥10 USD $0.56584
≥100 USD $0.391952
≥500 USD $0.327501
≥1000 USD $0.278731
Inventory: 174
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mounting Type Surface Mount
Package / Case 9-UFBGA, DSBGA
Surface Mount YES
Number of Pins 9
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD22206
Number of Elements 1
Power Dissipation-Max 1.7W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.05V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2275pF @ 4V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 14.6nC @ 4.5V
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) -6V
Drain Current-Max (Abs) (ID) 5A
Pulsed Drain Current-Max (IDM) 108A
DS Breakdown Voltage-Min 8V
Feedback Cap-Max (Crss) 440 pF
Dimensions
Height 625μm
Length 1.75mm
Width 1.75mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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