Feedback Cap-Max (Crss) 55 pF
DS Breakdown Voltage-Min 80V
Drain-source On Resistance-Max 0.0028Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 273A
Turn-Off Delay Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 80V
Gate Charge (Qg) (Max) @ Vgs 156nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Input Capacitance (Ciss) (Max) @ Vds 12200pF @ 40V
Vgs(th) (Max) @ Id 3.2V @ 250μA
Rds On (Max) @ Id, Vgs 2.3m Ω @ 100A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 375W Tc
Base Part Number CSD19506
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ