Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ
Drain to Source Breakdown Voltage 80V
Drain-source On Resistance-Max 0.0079Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 39 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 40V
Vgs(th) (Max) @ Id 3.2V @ 250μA
Rds On (Max) @ Id, Vgs 6.6m Ω @ 60A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 217W Tc
Base Part Number CSD19501
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED