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CSD19501KCS

Texas Instruments
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 80V 100A TO220
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Buying Options
Total Price: USD $1.62
Unit Price: USD $1.6192
≥1 USD $1.6192
≥10 USD $1.301872
≥100 USD $1.071136
≥500 USD $0.906312
≥1000 USD $0.768988
≥3000 USD $0.730541
Inventory: 636
Minimum: 1
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Technical Details

Technical

Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series NexFET?
Packaging Tube
Operating Temperature -55°C~175°C TJ
Drain to Source Breakdown Voltage 80V
Drain-source On Resistance-Max 0.0079Ohm
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 2.6V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 39 ns
Fall Time (Typ) 5 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Rise Time 15 ns
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 40V
Vgs(th) (Max) @ Id 3.2V @ 250μA
Rds On (Max) @ Id, Vgs 6.6m Ω @ 60A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 21 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 217W Tc
Number of Channels 1
Number of Elements 1
Base Part Number CSD19501
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Physical

Transistor Element Material SILICON
Weight 6.000006g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 16 Weeks

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC

Dimensions

Thickness 4.58mm
Width 8.7mm
Length 10.16mm
Height 4.7mm

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