Drain to Source Breakdown Voltage 12V
Drain-source On Resistance-Max 0.065Ohm
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 2.9A
Turn-Off Delay Time 96 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Gate Charge (Qg) (Max) @ Vgs 2.6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.9A Ta
Input Capacitance (Ciss) (Max) @ Vds 291pF @ 6V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Rds On (Max) @ Id, Vgs 44m Ω @ 500mA, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 500mW Ta
Base Part Number CSD13383
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ