STY80NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 600V 74A 3-Pin(3+Tab) Max247 Tube
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Buying Options
Total Price: USD $9.68
Unit Price: USD $9.67765
≥1 USD $9.67765
≥10 USD $7.94105
≥100 USD $7.69215
≥500 USD $7.4442
≥1000 USD $7.19625
Inventory: 1156
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5.3mm
Length 15.9mm
Height 20.3mm
Technical
Drain to Source Breakdown Voltage 600V
Drain Current-Max (Abs) (ID) 74A
Gate to Source Voltage (Vgs) 25V
Threshold Voltage 3V
Continuous Drain Current (ID) 37A
Turn-Off Delay Time 440 ns
Fall Time (Typ) 200 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 65ns
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Current - Continuous Drain (Id) @ 25°C 74A Tc
Input Capacitance (Ciss) (Max) @ Vds 10100pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 35m Ω @ 37A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 50 ns
Power Dissipation 447W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 447W Tc
Number of Elements 1
Pin Count 3
Base Part Number STY80N
Peak Reflow Temperature (Cel) 225
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish MATTE TIN
Resistance 35MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
JESD-609 Code e3
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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