STW54NM65ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 650V 0.055 Ohm 49A FDmesh II
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Buying Options
Total Price: USD $29.53
Unit Price: USD $29.53265
≥1 USD $29.53265
≥10 USD $24.2326
≥100 USD $23.47545
≥500 USD $22.71735
≥1000 USD $21.9602
Inventory: 2862
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 850 mJ
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 49A
Turn-Off Delay Time 152 ns
Fall Time (Typ) 98 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 59ns
Gate Charge (Qg) (Max) @ Vgs 188nC @ 10V
Current - Continuous Drain (Id) @ 25°C 49A Tc
Input Capacitance (Ciss) (Max) @ Vds 6200pF @ 50V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 65m Ω @ 24.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 350W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 350W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STW54N
Technology MOSFET (Metal Oxide)
Terminal Finish Tin (Sn)
Resistance 65MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series FDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 42 Weeks
Alternative Model
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