Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 79m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4650pF @ 100V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 950 mJ
Max Junction Temperature (Tj) 150°C