Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6.6 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 50V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 71 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 25V
Pulsed Drain Current-Max (IDM) 68A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 254 mJ