Pulsed Drain Current-Max (IDM) 260A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0097Ohm
Continuous Drain Current (ID) 65A
Turn-Off Delay Time 32.4 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Input Capacitance (Ciss) (Max) @ Vds 1290pF @ 25V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 7.3m Ω @ 32.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 50W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Powers
Additional Feature ULTRA-LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ