STU12N65M5
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 8.5A IPAK
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Buying Options
Total Price: USD $9.82
Unit Price: USD $9.82205
≥1 USD $9.82205
≥10 USD $8.05885
≥100 USD $7.8071
≥500 USD $7.55535
≥1000 USD $7.3036
Inventory: 1593
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? V
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 430MOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Base Part Number STU12N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Turn On Delay Time 22.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 430m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8.5A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 17.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 15.6 ns
Turn-Off Delay Time 15.6 ns
Continuous Drain Current (ID) 8.5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Dimensions
Height 2.4mm
Length 6.6mm
Width 6.2mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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