Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.7W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9.3 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.6m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 22.7 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 22V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 52A