STP8NM60
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 8A TO-220
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Buying Options
Total Price: USD $0.51
Unit Price: USD $0.51205
≥1 USD $0.51205
≥10 USD $0.4199
≥100 USD $0.4066
≥500 USD $0.39425
≥1000 USD $0.38095
Inventory: 25039
Minimum: 1
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Technical Details
Technical
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 200 mJ
Drain-source On Resistance-Max 1Ohm
Drain Current-Max (Abs) (ID) 8A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 8A
Turn-Off Delay Time 23 ns
Fall Time (Typ) 10 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 10ns
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 1 Ω @ 2.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 14 ns
Power Dissipation 100W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 100W Tc
Number of Elements 1
Pin Count 3
Base Part Number STP8N
Current Rating 8A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 650V
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series MDmesh?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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