STP20NM60A
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 20A TO-220
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Buying Options
Total Price: USD $2.19
Unit Price: USD $2.18785
≥1 USD $2.18785
≥10 USD $1.79455
≥100 USD $1.7385
≥500 USD $1.68245
≥1000 USD $1.6264
Inventory: 1099
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Pulsed Drain Current-Max (IDM) 80A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.29Ohm
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 46 ns
Fall Time (Typ) 20 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Rise Time 16ns
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 290m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 192W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 192W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STP20N
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 20A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 600V
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series MDmesh?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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