STP12NM50FD
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 12A TO-220
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Buying Options
Total Price: USD $0.87
Unit Price: USD $0.87305
≥1 USD $0.87305
≥10 USD $0.7163
≥100 USD $0.69445
≥500 USD $0.67165
≥1000 USD $0.6498
Inventory: 5711
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 400 mJ
Pulsed Drain Current-Max (IDM) 48A
Drain to Source Breakdown Voltage 500V
Drain-source On Resistance-Max 0.4Ohm
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 39 ns
Fall Time (Typ) 18 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 10ns
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 400m Ω @ 6A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 19 ns
Power Dissipation 160W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 160W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STP12
Current Rating 12A
Peak Reflow Temperature (Cel) 245
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series FDmesh?
Packaging Tube
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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