Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3.6A
Turn-Off Delay Time 23.7 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 800V
Gate Charge (Qg) (Max) @ Vgs 13.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.6A Tc
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 100V
Vgs(th) (Max) @ Id 5V @ 100μA
Rds On (Max) @ Id, Vgs 1.2 Ω @ 3A, 10V
Transistor Application SWITCHING
Turn On Delay Time 11.3 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 42W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ