STI21NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 17A I2PAK
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 610 mJ
Pulsed Drain Current-Max (IDM) 68A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.22Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 70 ns
Fall Time (Typ) 48 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 16ns
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 50V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 220m Ω @ 8.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 140W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 140W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number STI21N
Reach Compliance Code unknown
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series FDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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