Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature ULTRA LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0025Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 720A
Avalanche Energy Rating (Eas) 500 mJ
Max Junction Temperature (Tj) 175°C