Avalanche Energy Rating (Eas) 515 mJ
DS Breakdown Voltage-Min 80V
Pulsed Drain Current-Max (IDM) 360A
Drain-source On Resistance-Max 0.004Ohm
Continuous Drain Current (ID) 90A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 80V
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Input Capacitance (Ciss) (Max) @ Vds 6340pF @ 40V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 4m Ω @ 45A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 200W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, STripFET? F7
Operating Temperature -55°C~175°C TJ