Drain to Source Breakdown Voltage 800V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 5.2A
Turn-Off Delay Time 45 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.2A Tc
Input Capacitance (Ciss) (Max) @ Vds 1138pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 1.8 Ω @ 2.6A, 10V
Element Configuration Single
Power Dissipation-Max 125W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, SuperMESH?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ