STB36NM60ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 29A D2PAK
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Buying Options
Total Price: USD $5.54
Unit Price: USD $5.5352
≥1 USD $5.5352
≥10 USD $4.6508
≥100 USD $3.762704
Inventory: 575
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Series Automotive, AEC-Q101, FDmesh? II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 110mOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STB36N
Number of Channels 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Power Dissipation 190W
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2785pF @ 50V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 80.4nC @ 10V
Rise Time 53.4ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 61.8 ns
Turn-Off Delay Time 111 ns
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Dimensions
Height 4.6mm
Length 10.4mm
Width 9.35mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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