RS1E281BNTB1
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
RS1E281BN IS LOW ON-RESISTANCE A
PDF
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Buying Options
Total Price: USD $1.64
Unit Price: USD $1.6368
≥1 USD $1.6368
≥10 USD $1.35872
≥100 USD $1.08152
≥500 USD $0.915112
≥1000 USD $0.776459
Inventory: 972
Minimum: 1
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Technical Details
Technical
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 28A
Drain-source On Resistance-Max 0.0032Ohm
Pulsed Drain Current-Max (IDM) 112A
DS Breakdown Voltage-Min 30V
Current - Continuous Drain (Id) @ 25°C 28A Ta 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 2.3m Ω @ 28A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PDSO-F5
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Avalanche Energy Rating (Eas) 190 mJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 16 Weeks
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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