Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 60 ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Current - Continuous Drain (Id) @ 25°C 17A Ta
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 20V
Halogen Free Halogen Free
Rds On (Max) @ Id, Vgs 111m Ω @ 8.5A, 10V
Element Configuration Single
Power Dissipation-Max 1W Ta 35W Tc
Technology MOSFET (Metal Oxide)
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ