Turn On Delay Time 9.5 ns
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1264pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9.7A Ta 48A Tc
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Turn-Off Delay Time 16.4 ns
Continuous Drain Current (ID) 48A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.7A
Drain-source On Resistance-Max 0.01Ohm
Drain to Source Breakdown Voltage 30V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 920mW Ta 23.2W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ