IXTV02N250S
RoHS
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Package PLUS-220SMD
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) PLUS220 SMD
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Technical Details
Technical
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 2.5kV
Pulsed Drain Current-Max (IDM) 0.5A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 2500V
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Input Capacitance (Ciss) (Max) @ Vds 116pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 450 Ω @ 50mA, 10V
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 57mW
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 83W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Physical
Transistor Element Material SILICON
Number of Pins 220
Package / Case PLUS-220SMD
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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