IXFB100N50Q3
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A
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Buying Options
Total Price: USD $36.79
Unit Price: USD $36.7928
≥1 USD $36.7928
≥10 USD $32.78616
≥100 USD $28.778112
Inventory: 42
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 5.31mm
Length 20.29mm
Height 26.59mm
Technical
Avalanche Energy Rating (Eas) 5000 mJ
Pulsed Drain Current-Max (IDM) 300A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 100A
Turn-Off Delay Time 50 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 250 ns
Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 25V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Rds On (Max) @ Id, Vgs 49m Ω @ 50A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 40 ns
Case Connection DRAIN
Power Dissipation 1.56kW
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1560W Tc
Number of Elements 1
JESD-30 Code R-PSIP-T3
Pin Count 3
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 49MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HiPerFET?
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 264
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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