C3M0120100K
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-4
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 22A TO247-4L
PDF
/
Buying Options
Total Price: USD $10.32
Unit Price: USD $10.3224
≥1 USD $10.3224
≥10 USD $8.65685
Inventory: 2584
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
DS Breakdown Voltage-Min 1000V
Pulsed Drain Current-Max (IDM) 50A
Drain-source On Resistance-Max 0.155Ohm
Drain Current-Max (Abs) (ID) 22A
Vgs (Max) ±15V
Drive Voltage (Max Rds On,Min Rds On) 15V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 15V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 600V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Rds On (Max) @ Id, Vgs 155m Ω @ 15A, 15V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 83W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T4
Reference Standard IEC-60747-8-4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology SiCFET (Silicon Carbide)
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series C3M?
Published 2016
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Surface Mount NO
Package / Case TO-247-4
Mounting Type Through Hole
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
Recommended For You
C3M0120100K+price,C3M0120100K+datasheet,C3M0120100K+in stock,buy+C3M0120100K,finder+C3M0120100K,C3M0120100K+tutorials,C3M0120100K+download