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Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole PNP Single Bipolar (BJT) Transistor 63 @ 150mA 2V 100nA ICBO 1.25W -80V
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Buying Options
Total Price: USD $0.17
Unit Price: USD $0.171
≥1 USD $0.171
≥10 USD $0.1406
≥100 USD $0.13585
≥500 USD $0.13205
≥1000 USD $0.1273
Inventory: 40352
Minimum: 1
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Weight 761mg
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 1.25W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -1.5A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BD140
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1.25W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
hFE Min 40

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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