MPSH81
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
Bulk Through Hole PNP Single RF Transistor 60 @ 5mA 10V 50mA 350mW 600MHz
PDF
/
Buying Options
Total Price: USD $0.33
Unit Price: USD $0.333376
≥1 USD $0.333376
≥10 USD $0.314507
≥100 USD $0.296701
≥500 USD $0.279907
≥1000 USD $0.264067
Inventory: 1122
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Collector-Base Capacitance-Max 0.85pF
Continuous Collector Current 50mA
hFE Min 60
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 20V
Transition Frequency 600MHz
Collector Emitter Breakdown Voltage 20V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 20V
Transistor Type PNP
Polarity/Channel Type PNP
Transistor Application AMPLIFIER
Power Dissipation 350mW
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number MPSH81
Frequency 600MHz
Current Rating -50mA
Terminal Position BOTTOM
Max Power Dissipation 350mW
Voltage - Rated DC -20V
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 195mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
Recommended For You
MPSH81+price,MPSH81+datasheet,MPSH81+in stock,buy+MPSH81,finder+MPSH81,MPSH81+tutorials,MPSH81+download