NE85639-A
RoHS
/
Package TO-253-4, TO-253AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 12V 9GHZ SOT143
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Continuous Collector Current 100mA
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 20V
Frequency - Transition 9GHz
Gain 13dB
Collector Emitter Breakdown Voltage 12V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 12V
Transistor Type NPN
Element Configuration Single
Base Part Number NE85639
Max Power Dissipation 200mW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Number of Pins 4
Package / Case TO-253-4, TO-253AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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