Drain to Source Resistance 32mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -12V
Drain Current-Max (Abs) (ID) 5.47A
Continuous Drain Current (ID) -4.4A
Nominal Input Voltage -12V
Polarity/Channel Type P-CHANNEL
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Qualification Status Not Qualified
Function Power Management
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ