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2N6796

Microsemi Corporation
RoHS
/
Package TO-205AF Metal Can
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V TO-205AF TO-39
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Inventory: 1450
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AF Metal Can
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code O-MBCY-W3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 800mW Ta 25W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250mA
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 6.34nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 8A
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.195Ohm
DS Breakdown Voltage-Min 100V

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

TSM130NB06LCR

Taiwan Semiconductor Corporation

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