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2N7002PS,115
RoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 60V 0.32A 6TSSOP
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Buying Options
Total Price: USD $0.08
Unit Price: USD $0.079092
≥1 USD $0.079092
≥500 USD $0.058147
≥1000 USD $0.048464
≥2000 USD $0.044458
≥5000 USD $0.041546
≥10000 USD $0.038659
≥15000 USD $0.037378
≥50000 USD $0.036758
Inventory: 5017
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Resistance 1.6Ohm
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 420mW
Terminal Form GULL WING
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 320mW
Turn On Delay Time 3 ns
Power - Max 420mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 4.5V
Rise Time 4ns
Fall Time (Typ) 4 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 320mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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